Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Gate capacitances of high electron mobility transistors

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Wire-channel and wrap-around-gate metal–oxide–semiconductor field- effect transistors with a significant reduction of short channel effects

Metal–oxide–semiconductor field-effect transistors ~MOSFETs! with a wire-channel and wrap-around-gate ~WW! structure were fabricated using electron beam lithography and reactive ion etching. The smallest devices have a 35 nm channel width, a 50 nm channel thickness, and a 70 nm channel length. Measurements showed that as the channel width of WW MOSFETs decreased from 75 to 35 nm short channel e...

Dual-Heterojunction High Electron Mobility Transistors on GaAs Substrate

The high electron mobility transistors (HEMT’s) in general and AlGaAs/GaAs/AlGaAs dualheterojunction high electron mobility transistors (DHHEMT) specifically have been studied in this paper. These devices show superior characteristics over other types of FET’s for high frequency microwave power applications. The structure of a heterojunction have been discussed followed by two and multiple-chan...